A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

Myounggon KANG; Ki-Tae PARK; Youngsun SONG; Sungsoo LEE; Yunheub SONG; Young-Ho LIM

doi:10.1587/transele.E93.C.182

Regular Section

A Low Power and Area Scalable High Voltage Switch Technique for Low Operation Voltage in MLC NAND Flash Memory

Myounggon KANG, Ki-Tae PARK, Youngsun SONG, Sungsoo LEE, Yunheub SONG, Young-Ho LIM

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Keywords: NAND, FLASH, row decoder, high voltage switch, low voltage, area scaling, low power

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2010 Volume E93.C Issue 2 Pages 182-186

DOI https://doi.org/10.1587/transele.E93.C.182

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Abstract

A new low voltage operation of high voltage switching technique, which is capable of reducing leakage current by an order of three compared to conventional circuits, has been developed for sub-1.8V low voltage mobile NAND flash memory. In addition, by using the proposed high voltage switch, chip size scaling can be realized due to reduced a minimum required space between the N-wells of selected and unselected blocks for isolation. The proposed scheme is essential to achieve low power operation NAND Flash memory, especially for mobile electronics.

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