An on-chip Charged Device Model (CDM) ESD protection method for RF ICs is proposed in a 0.13µm RF process and evaluated by using very fast Transmission Line Pulse (vf-TLP) system. Key design parameters such as triggering voltage (V_t1) and the oxide breakdown voltage from the vf-TLP measurement are used to design input ESD protection circuits for a RF test chip. The characterization and the behavior of a Low Voltage Triggered Silicon Controlled Rectifier (SCR) which used for ESD protection clamp under vf-TLP measurements are also reported. The results measured by vf-TLP system showed that the triggering voltage decreased and the second breakdown current increased in comparison with the results measured by a standard 100ns TLP system. From the HBM/CDM testing, the RF test chip successfully met the requested RF ESD withstand level, HBM 1kV, MM 100V and CDM 500V.