A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling

Naoki TAKAYAMA; Kota MATSUSHITA; Shogo ITO; Ning LI; Keigo BUNSEN; Kenichi OKADA; Akira MATSUZAWA

doi:10.1587/transele.E93.C.812

Special Section on Analog Circuits and Related SoC Integration Technologies

A De-Embedding Method Using Different-Length Transmission Lines for mm-Wave CMOS Device Modeling

Naoki TAKAYAMA, Kota MATSUSHITA, Shogo ITO, Ning LI, Keigo BUNSEN, Kenichi OKADA, Akira MATSUZAWA

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Keywords: de-embedding, S-parameter measurement, mm-wave, RF CMOS, transmission line

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 6 Pages 812-819

DOI https://doi.org/10.1587/transele.E93.C.812

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Abstract

This paper proposes a de-embedding method for on-chip S-parameter measurements at mm-wave frequency. The proposed method uses only two transmission lines with different length. In the proposed method, a parasitic-component model extracted from two transmission lines can be used for de-embedding for other-type DUTs like transistor, capacitor, inductor, etc. The experimental results show that the error in characteristic impedance between the different-length transmission lines is less than 0.7% above 40GHz. The extracted pad model is also shown.

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