Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
A New 1T DRAM Cell: Cone Type 1T DRAM Cell
2011 Volume E94.C Issue 5 Pages 681-685
Details
2011 Volume E94.C Issue 5 Pages 681-685
We propose a new cone-type DRAM cell as a 1T DRAM cell. The superiority of cone shape is already reported, in that the electric field concentration effect encourages impact ionization phenomenon. So the device has improved DRAM characteristics compared with cylinder type 1T DRAM Cell (SGVC Cell). To confirm the memory operation of the cone-type DRAM cell, simulation works were carried out. Also, retention characteristic shows the device can be used practically.
