A 50ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit

Shyh-Shyuan SHEU; Kuo-Hsing CHENG; Yu-Sheng CHEN; Pang-Shiu CHEN; Ming-Jinn TSAI; Yu-Lung LO

doi:10.1587/transele.E95.C.1128

Regular Section

A 50ns Verify Speed in Resistive Random Access Memory by Using a Write Resistance Tracking Circuit

Shyh-Shyuan SHEU, Kuo-Hsing CHENG, Yu-Sheng CHEN, Pang-Shiu CHEN, Ming-Jinn TSAI, Yu-Lung LO

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Keywords: Resistive RAM (RRAM), verify, write resistance tracking circuit

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 6 Pages 1128-1131

DOI https://doi.org/10.1587/transele.E95.C.1128

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Abstract

This paper proposes a write resistance tracking circuit (WRTC) to improve the memory window of HfOx-based resistive memory. With a 50-ns single voltage pulse, the minimal resistance of the high resistance state in the 1-kb array of resistive switching elements can increase from 25kΩ to 65kΩ by using the proposed verify circuit. The WRTC uses the transition current detection method based on the feedback of the memory cell to control the write driver. The WRTC achieves distinct bistable resistance states, avoids the occurrence of over-RESET, and enhances the memory window of the RRAM cell.

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