Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

Tadayoshi DEGUCHI; Hideshi TOMITA; Atsushi KAMADA; Manabu ARAI; Kimiyoshi YAMASAKI; Takashi EGAWA

doi:10.1587/transele.E95.C.1343

Special Section on Heterostructure Microelectronics with TWHM 2011

Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

Tadayoshi DEGUCHI, Hideshi TOMITA, Atsushi KAMADA, Manabu ARAI, Kimiyoshi YAMASAKI, Takashi EGAWA

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Keywords: AlGaN/GaN HFETs, current collapse, field plate, on-resistance

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2012 Volume E95.C Issue 8 Pages 1343-1347

DOI https://doi.org/10.1587/transele.E95.C.1343

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Abstract

Current collapse of AlGaN/GaN heterostructure field-effect transistors (HFETs) formed on qualified epitaxial layers on Si substrates was successfully suppressed using graded field-plate (FP) structures. To improve the reproducibility of the FP structure manufacturing process, a simple process for linearly graded SiO₂ profile formation was developed. An HFET with a graded FP structure exhibited a significant decrease in an on-resistance increase ratio of 1.16 even after application of a drain bias of 600V.

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