IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Heterostructure Microelectronics with TWHM 2011
High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE, Noriaki KOGUSHI, Kian Siong ANG, René HOFSTETTER, Kumar MANOJ, Louis Nicholas RETNAM, Hong WANG, Geok Ing NG, Chon JIN, Dimitris PAVLIDIS
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Keywords: Seebeck effect, heterostructure-thermopile, AlGaAs/InGaAs, AlGaN/GaN, HEMT, FPA, infrared image sensor
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2012 Volume E95.C Issue 8 Pages 1354-1362

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Abstract

Novel thermopiles based on modulation doped AlGaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900V/W with 110µs for AlGaAs/InGaAs, and to 460V/W with 9µs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32×32 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application.

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© 2012 The Institute of Electronics, Information and Communication Engineers
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