Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection

Hiroki ISHIHARA; Yosuke SAITO; Wataru KOBAYASHI; Hiroshi YASAKA

doi:10.1587/transele.E95.C.1549

Regular Section

Bandwidth Enhanced Operation of Single Mode Semiconductor Laser by Intensity Modulated Signal Light Injection

Hiroki ISHIHARA, Yosuke SAITO, Wataru KOBAYASHI, Hiroshi YASAKA

Author information

Keywords: semiconductor lasers, intensity modulation, modulation bandwidth, gain saturation, non-linear gain, optical injection

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 9 Pages 1549-1551

DOI https://doi.org/10.1587/transele.E95.C.1549

Details

Abstract

3dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.

Corresponding author

Register with J-STAGE for free!