A solution-processed photosensitive passivation layer with a low dielectric constant (PPLD) has been developed for an a-Si thin film transistor. The PPLD has three highly important properties: a low leakage current, low water absorption, and high-transparency. In addition to providing passivation, the PPLD doubles as a planarization layer. The photoactive property of the PPLD is convenient for its adaption to LCD manufacturing process. A photoactive compound contained in the PPLD enables the formation of contact holes and patterns via a photolithography process. Meanwhile, the PPLD requires ITO workability and strong adhesion property on metal and glass substrates. Apart from the above features, an a-Si TFT must perform with extremely high reliability if it is to replace the conventional inorganic passivation layer (SiN_x: H). This reliability has been achieved by an a-Si TFT and LCD panel coated with the PPLD. A reliability test was conducted under a high-temperature, high-humidity (HH) condition to examine how resistant the electronic characteristics were to change. The PPLD-coated LCD panel display view showed no defects for a test duration of HH200 hours. This high reliability was presumed to be at least partly attributable to the low water absorption rate of the passivation layer and the suppression of the increase of the TFT off-leakage current by the PPLD, a passivation layer designed to be non-polar as possible. Judging from the results of these experiments, this solution-processed passivation layer seems to be a viable substitute for the conventional inorganic passivation layer. For a larger screen LCD and higher drive frequency, the problem of RC delay has been emerged. The low dielectric constant of the PPLD will suppress the RC delay of the signal and realize both a higher pixel and a higher drive frequency.