Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device

Sang-Gun LEE; Hong-Seok CHOI; Chang-Wook HAN; Seok-Jong LEE; Yoon-Heung TAK; Byung-Chul AHN

doi:10.1587/transele.E95.C.1756

Special Section on Electronic Displays

Numerical Modeling; Thickness Dependence of J-V Characteristic for Multi-Layered OLED Device

Sang-Gun LEE, Hong-Seok CHOI, Chang-Wook HAN, Seok-Jong LEE, Yoon-Heung TAK, Byung-Chul AHN

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Keywords: OLED, fitting parameter, J-V characteristics, device simulation

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 11 Pages 1756-1760

DOI https://doi.org/10.1587/transele.E95.C.1756

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Abstract

A numerical model of multi-layered organic light emitting diode (OLED) is presented in this paper. The current density-voltage (J-V) model for OLED was performed by using the injection-limited current and bulk-limited current. The mobility equation was based on the field dependent model, so called “Poole-Frenkel mobility model.” The accuracy of this simulation was represented by comparing to the experimental results with a variable of EML thickness of multi-layered OLED device. There are two hetero-junction models which should be dealt with in the simulation. The Langevin recombination rate of electron and hole is also calculated through the device simulation.

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