A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology

Shin-ichi O'UCHI; Kazuhiko ENDO; Takashi MATSUKAWA; Yongxun LIU; Tadashi NAKAGAWA; Yuki ISHIKAWA; Junichi TSUKADA; Hiromi YAMAUCHI; Toshihiro SEKIGAWA; Hanpei KOIKE; Kunihiro SAKAMOTO; Meishoku MASAHARA

doi:10.1587/transele.E95.C.686

Special Section on Solid-State Circuit Design - Architecture, Circuit, Device and Design Methodology

A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology

Shin-ichi O'UCHI, Kazuhiko ENDO, Takashi MATSUKAWA, Yongxun LIU, Tadashi NAKAGAWA, Yuki ISHIKAWA, Junichi TSUKADA, Hiromi YAMAUCHI, Toshihiro SEKIGAWA, Hanpei KOIKE, Kunihiro SAKAMOTO, Meishoku MASAHARA

Author information

Shin-ichi O'UCHI
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Kazuhiko ENDO
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Takashi MATSUKAWA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Yongxun LIU
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Tadashi NAKAGAWA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Yuki ISHIKAWA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Junichi TSUKADA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Hiromi YAMAUCHI
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Toshihiro SEKIGAWA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Hanpei KOIKE
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Kunihiro SAKAMOTO
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
Meishoku MASAHARA
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)

Keywords: Common-Double-Gate FinFET, Independent-Double-Gate FinFET, common-mode voltage range, low voltage, differential amplifier, source follower

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 4 Pages 686-695

DOI https://doi.org/10.1587/transele.E95.C.686

Details

Abstract

This paper demonstrates a FinFET operational amplifier (opamp), which is suitable to be integrated with digital circuits in a scaled low-standby-power (LSTP) technology and operates at extremely low voltage. The opamp is consisting of an adaptive threshold-voltage (V_t) differential pair and a low-voltage source follower using independent-double-gate- (IDG-) FinFETs. These two components enable the opamp to extend the common-mode voltage range (CMR) below the nominal V_t even if the supply voltage is less than 1.0V. The opamp was implemented by our FinFET technology co-integrating common-DG- (CDG-) and IDG-FinFETs. More than 40-dB DC gain and 1-MHz gain-bandwidth product in the 500-mV-wide input CMR at the supply voltage of 0.7V was estimated with SPICE simulation. The fabricated chip successfully demonstrated the 0.7-V operation with the 480-mV-wide CMR, even though the nominal V_t was 400mV.

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