Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Akio OHTA; Yuta GOTO; Shingo NISHIGAKI; Guobin WEI; Hideki MURAKAMI; Seiichiro HIGASHI; Seiichi MIYAZAKI

doi:10.1587/transele.E95.C.879

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering

Akio OHTA, Yuta GOTO, Shingo NISHIGAKI, Guobin WEI, Hideki MURAKAMI, Seiichiro HIGASHI, Seiichi MIYAZAKI

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Keywords: resistive random access memory (ReRAM), Si oxide, RF sputtering, Pt electrodes, resistance switching

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 5 Pages 879-884

DOI https://doi.org/10.1587/transele.E95.C.879

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Abstract

We have studied resistance-switching properties of RF sputtered Si-rich oxides sandwiching with Pt electrodes. By sweeping bias to the top Pt electrode, non-polar type resistance switching was observed after a forming process. In comparison to RF sputtered TiO_x case, significant small current levels were obtained in both the high resistance state (HRS) and the low resistance state (LRS). And, even with decreasing SiO_x thickness down to ∼8nm from 40nm, the ON/OFF ratio in resistance-switching between HRS and LRS as large as ∼10 ³ was maintained. From the analysis of current-voltage characteristics for Pt/SiO_x on p-type Si(100) and n-type Si(100), it is suggested that the red-ox (REDction and OXidation) reaction induced by electron fluence near the Pt/SiO_x interface is of importance for obtaining the resistance-switching behavior.

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