Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique

An-Sam PENG; Ming-Hsiang CHO; Yueh-Hua WANG; Meng-Fang WANG; David CHEN; Lin-Kun WU

doi:10.1587/transele.E96.C.1289

Special Section on Emerging Technologies and Applications for Microwave and Millimeter-Wave Systems

Through-Silicon-Via Characterization and Modeling Using a Novel One-Port De-Embedding Technique

An-Sam PENG, Ming-Hsiang CHO, Yueh-Hua WANG, Meng-Fang WANG, David CHEN, Lin-Kun WU

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Keywords: 3D IC, TSV, de-embedding, TEGs, microwave, RF modeling

JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 10 Pages 1289-1293

DOI https://doi.org/10.1587/transele.E96.C.1289

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Abstract

In this paper, a novel and simple one-port de-embedding technique has been applied to through-silicon-via (TSV) characterization and modeling. This method utilized pad, via, and line structures to extract the equivalent circuit model of TSV. The main advantage of this de-embedding method is that it can reduce the chip area to fabricate test element groups (TEGs) for measurements while keeping S-parameter measurement accuracies. We also analyzed the electrical characteristics of substrate coupling and TSV equivalent impedance. Our results shows good agreements between measurement data and the equivalent circuit model up to 20GHz.

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