Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO; Shin-ichi OUCHI; Takashi MATSUKAWA; Yongxun LIU; Meishoku MASAHARA

doi:10.1587/transele.E96.C.413

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology

Independent-Double-Gate FinFET SRAM Technology

Kazuhiko ENDO, Shin-ichi OUCHI, Takashi MATSUKAWA, Yongxun LIU, Meishoku MASAHARA

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Keywords: multi-gate devices, FinFET, SRAM, noise margin

JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 4 Pages 413-423

DOI https://doi.org/10.1587/transele.E96.C.413

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Abstract

Multi-Gate device technology is the promising candidate for the enhancement of device characteristics of the scaled MOSFETs. Moreover, independent-double-gate devices have been proposed to achieve flexible V_th adjustment. It is revealed that the SRAM noise margins have been increased by introducing the independent-double-gate FinFET.

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