IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Effects of Fluorine Implantation on 1/f Noise, Hot Carrier and NBTI Reliability of MOSFETs
Jae-Hyung JANG, Hyuk-Min KWON, Ho-Young KWAK, Sung-Kyu KWON, Seon-Man HWANG, Jong-Kwan SHIN, Seung-Yong SUNG, Yi-Sun CHUNG, Da-Soon LEE, Hi-Deok LEE
Author information
Keywords: fluorine, flicker noise, 1/f noise, reliability, hot-carrier, NBTI, MOSFET
JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 5 Pages 624-629

Details
Download PDF (2421K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract

The effects of fluorine implantation on flicker noise and reliability of NMOSFET and PMOSFETs were concurrently investigated. The flicker noise of an NMOSFET was decreased about 66% by fluorine implantation, and that of a PMOSET was decreased about 76%. As indicated by the results, fluorine implantation is one of the methods that can be used to improve the noise characteristics of MOSFET devices. However, hot-carrier degradation was enhanced by fluorine implantation in NMOSFETs, which can be related to the difference of molecular binding within the gate oxide. On the contrary, in case of PMOSFETs, NBTI life time was increased by fluorine implantation. Therefore, concurrent investigation of hot-carrier and NBTI reliability and flicker noise is necessary in developing MOSFETs for analog/digital mixed signal applications.

Content from these authors
© 2013 The Institute of Electronics, Information and Communication Engineers
Previous article Next article
Favorites & Alerts

Recently viewed articles
Announcements from publisher
Share this page
feedback
 Top