Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel

Min-Chul SUN; Sang Wan KIM; Garam KIM; Hyun Woo KIM; Hyungjin KIM; Byung-Gook PARK

doi:10.1587/transele.E96.C.639

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel

Min-Chul SUN, Sang Wan KIM, Garam KIM, Hyun Woo KIM, Hyungjin KIM, Byung-Gook PARK

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Keywords: TFET, compatibility to CMOS technology flow, sigma-shape embedded SiGe source, recessed channel

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2013 Volume E96.C Issue 5 Pages 639-643

DOI https://doi.org/10.1587/transele.E96.C.639

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Abstract

A novel tunneling field-effect transistor (TFET) featuring the sigma-shape embedded SiGe sources and recessed channel is proposed. The gate facing the source effectively focuses the E-field at the tip of the source and eliminates the gradual turn-on issue of planar TFETs. The fabrication scheme modified from the state-of-the-art 45nm/32nm CMOS technology flows provides a unique benefit in the co-integrability and the control of I_D-V_GS characteristics. The feasibility is verified with TCAD process simulation of the device with 14nm of the gate dimension. The device simulation shows 5-order change in the drain current with a gate bias change less than 300mV.

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