IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Terahertz Waves Coming to the Real World
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis
Shoichi SHIBA, Masaru SATO, Hiroshi MATSUMURA, Yoichi KAWANO, Tsuyoshi TAKAHASHI, Toshihide SUZUKI, Yasuhiro NAKASHA, Taisuke IWAI, Naoki HARA
Author information
Keywords: millimeter-wave, InP HEMTs, fundamental mixer, flip chip, waveguide module, spectrum analysis
JOURNAL RESTRICTED ACCESS

2015 Volume E98.C Issue 12 Pages 1112-1119

Details
Download PDF (1893K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract

A wide-bandwidth fundamental mixer operating at a frequency above 110GHz for precise spectrum analysis was developed using the InP HEMT technology. A single-ended resistive mixer was adopted for the mixer circuit. An IF amplifier and LO buffer amplifier were also developed and integrated into the mixer chip. As for packaging into a metal block module, a flip-chip bonding technique was introduced. Compared to face-up mounting with wire connections, flip-chip bonding exhibited good frequency flatness in signal loss. The mixer module with a built-in IF amplifier achieved a conversion gain of 5dB at an RF frequency of 135GHz and a 3-dB bandwidth of 35GHz. The mixer module with an LO buffer amplifier operated well even at an LO power of -20dBm.

Content from these authors
© 2015 The Institute of Electronics, Information and Communication Engineers
Previous article Next article
Favorites & Alerts

Recently viewed articles
Announcements from publisher
Share this page
feedback
 Top