A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure

Naokatsu YAMAMOTO; Kouichi AKAHANE; Toshimasa UMEZAWA; Tetsuya KAWANISHI

doi:10.1587/transele.E98.C.878

Special Section on Microwave Photonics

A 1.55-µm Waveband Optical Absorption Characterization of an Electro-Absorption Device with a Highly Stacked InAs/InGaAlAs Quantum Dot Structure

Naokatsu YAMAMOTO, Kouichi AKAHANE, Toshimasa UMEZAWA, Tetsuya KAWANISHI

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Keywords: quantum dot, electro-absorption, optical modulator, quantum confined stark effect, waveguide device

JOURNAL RESTRICTED ACCESS

2015 Volume E98.C Issue 8 Pages 878-881

DOI https://doi.org/10.1587/transele.E98.C.878

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Abstract

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-µm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

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