SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System

Yasushi IGARASHI; Tadashi CHIBA; Shin-ichi O'UCHI; Meishoku MASAHARA; Kunihiro SAKAMOTO

doi:10.1587/transfun.E97.A.741

Special Section on Analog Circuit Techniques and Related Topics

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor System

Yasushi IGARASHI, Tadashi CHIBA, Shin-ichi O'UCHI, Meishoku MASAHARA, Kunihiro SAKAMOTO

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Keywords: voltage multiplier, RF-to-DC converter, SOI MOSFET, self-control of body bias

JOURNAL RESTRICTED ACCESS

2014 Volume E97.A Issue 3 Pages 741-748

DOI https://doi.org/10.1587/transfun.E97.A.741

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Abstract

Voltage multiplier (VM) circuits for RF (2.45GHz)-to-DC conversion are developed for battery-less sensor nodes. Converted DC power is charged on a storage capacitor before driving a wireless sensor module. A charging time of the storage capacitor of the proposed VM circuits is reduced 1/10 of the conventional VM circuits, because they have constant current characteristics owing to self-control of body bias in diode-connected SOI MOSFETs. The wireless sensor system composed of the fabricated VM chip and a commercially available sensor module is operated using an RF signal of a wireless LAN modem (2.45GHz) as a power source.

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