In this paper, the effects of the TiN encapsulating layer and the dopant segregation process on the interface properties and the Schottky barrier height reduction of PdEr-silicide/n-Si(100) were investigated. The results show that controlling the initial location of the boron dopants by adding the TiN encapsulating layer lowered the Schottky barrier height (SBH) for hole to 0.20 eV. Furthermore, the density of interface states (D_it) on the order of 10¹¹eV^-1cm^-2 was obtained indicating that the dopant segregation process with TiN encapsulating layer effectively annihilated the interface states.