A compact silicon photonic crystal waveguide (PCW) slow-light modulator is presented. The proposed modulator is capable of achieving a 64 Gbps bit-rate in a wide operating spectrum. The slow-light enhances the modulation efficiency in proportion to its group index n_g. Two types of 200-µm-long PCW modulators are presented. These are low- and high-dispersion devices, which are implemented using a complementary metal-oxide-insulator process. The lattice-shifted PCW achieved low-dispersion slow-light and exhibited n_g ≈ 20 with an operating spectrum Δλ ≈ 20 nm, in which the fluctuation of the extinction ratio is ±0.5 dB. The PCW device without the lattice shift exhibited high-dispersion, for which a large or small value of n_g can be set on demand by changing the wavelength. It was found that for a large n_g, the frequency response was degraded due to the electro-optic phase mismatch between the RF signals and slow-light even for such small-size modulators. Meander-line electrodes, which bypass and delay the RF signals to compensate for the phase mismatch, are proposed. A high cutoff frequency of 55 GHz was theoretically predicted, whereas the experimentally measured value was 38 GHz. A high-quality open eye pattern for a drive voltage of 1 V at 32 Gbps was observed. The clear eye pattern was maintained for 50-64 Gbps, although the drive voltage increased to 3.5-5.3 V. A preliminary operation of a 2-bits pulse amplitude modulation up to 100 Gbps was also attempted.