Integration of a Low-Voltage Organic Field-Effect Transistor and a Sensing Capacitor for a Pressure-Sensing Device

Heisuke SAKAI; Yushi TSUJI; Hideyuki MURATA

doi:10.1587/transele.E100.C.126

Special Section on Recent Progress in Organic Molecular Electronics

Integration of a Low-Voltage Organic Field-Effect Transistor and a Sensing Capacitor for a Pressure-Sensing Device

Heisuke SAKAI, Yushi TSUJI, Hideyuki MURATA

Author information

Keywords: low-voltage operation, pressure sensor, organic field-effect transistor, ferroelectric polymer

JOURNAL RESTRICTED ACCESS

2017 Volume E100.C Issue 2 Pages 126-129

DOI https://doi.org/10.1587/transele.E100.C.126

Details

Abstract

We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.

Corresponding author

Register with J-STAGE for free!