Improving robustness in electrostatic discharge (ESD) protection by inserting drain-side isolated silicon-controlled rectifiers (SCRs) in a high-voltage (HV) p-channel lateral-diffused MOSFET (pLDMOS) device was investigated in this paper. Additionally, the effects of anti-ESD reliability in the HV pLDMOS transistors provided by this technique were evaluated. From the experimental data, it was determined that the holding voltage (V_h) values of the pLDMOS with an embedded npn-arranged SCR and discrete thin-oxide (OD) layout on the cathode side increased as the parasitic SCR OD row number decreased. Moreover, the trigger voltage (V_t1) and the V_h values of the pLDMOS with a parasitic pnp-arranged SCR and discrete OD layout on the drain side fluctuated slightly as the SCR OD-row number decreased. Furthermore, the secondary breakdown current (I_t2) values (i.e., the equivalent ESD-reliability robustness) of all pLDMOS-SCR npn-arranged types increased (>408.4%) to a higher degree than those of the pure pLDMOS, except for npn-DIS_3 and npn-DIS_2, which had low areas of SCRs. All pLDMOS-SCR pnp-arranged types exhibited an increase of up to 2.2A-2.4A, except for the pnp_DIS_3 and pnp_DIS_2 samples; the pnp_DIS_91 increased by approximately 2000.9% (249.1%), exhibiting a higher increase than that of the reference pLDMOS (i.e., the corresponding pnp-stripe type). The ESD robustness of the pLDMOS-SCR pnp-arranged type and npn-arranged type with a discrete OD layout on the SCR cathode side was greater than that of the corresponding pLDMOS-SCR stripe type and a pure pLDMOS, particularly in the pLDMOS-SCR pnp-arranged type.