Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si1-xGex

Veerappan MANIMUTHU; Muthusamy OMPRAKASH; Mukannan ARIVANANDHAN; Faiz SALLEH; Yasuhiro HAYAKAWA; Hiroya IKEDA

doi:10.1587/transele.E100.C.482

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Phonon-Drag Contribution to Seebeck Coefficient in P-Type Si, Ge and Si_1-xGe_x

Veerappan MANIMUTHU, Muthusamy OMPRAKASH, Mukannan ARIVANANDHAN, Faiz SALLEH, Yasuhiro HAYAKAWA, Hiroya IKEDA

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Keywords: SiGe, thermoelectrics, Seebeck coefficient, phonon drag

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2017 Volume E100.C Issue 5 Pages 482-485

DOI https://doi.org/10.1587/transele.E100.C.482

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Abstract

The phonon-drag contribution to the Seebeck coefficient (S_ph) for p-type Si, Ge and Si_1-xGe_x is investigated for thermoelectric applications. The S_ph in Si and Ge is found to mainly determined by the phonon velocity, phonon mean free path and carrier mobility associated with acoustic deformation potential scattering. Moreover, the S_ph in Si_1-xGe_x is predictable by the above-mentioned material parameters interpolated with those in Si and Ge.

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