The electron retention characteristics of memory capacitors with blocking oxide-silicon carbonitride (SiCN)-tunnel oxide stacked films were investigated for application in embedded charge trapping nonvolatile memories (NVMs). Long-term data retention in the SiCN memory capacitors was estimated to be more than 10 years at 85 °C. We presented an improved method to analyze the energy distribution of electron trap states numerically. Using the presented analytical method, electron trap states in the SiCN film were revealed to be distributed from 0.8 to 1.3 eV below the conduction band edge in the SiCN band gap. The presence of energetically deep trap states leads us to suggest that the SiCN dielectric films can be employed as the charge trapping film of embedded NVMs.