IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication
Kentaro TOKOROShunsuke SAITOKensaku KANOMATAMasanori MIURABashir AHMMADShigeru KUBOTAFumihiko HIROSE
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2018 Volume E101.C Issue 5 Pages 317-322

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Abstract

We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.

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© 2018 The Institute of Electronics, Information and Communication Engineers
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