IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Low-Leakage, Low-Voltage, Low-Power and High-Speed Technologies for System LSIs in Deep-Submicron Era
Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros
Ryusuke NEBASHINoboru SAKIMURATadahiko SUGIBAYASHINaoki KASAI
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2009 Volume E92.C Issue 4 Pages 417-422

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Abstract

We propose an MRAM macro architecture for SoCs to reduce their area size. The shared write-selection transistor (SWST) architecture is based on 2T1MTJ MRAM cell technology, which enables the same fast access time with a smaller cell area than that of 6T SRAMs. We designed a 4-Mb macro using the SWST architecture with a 0.15-µm CMOS process and a 0.24-µm MRAM process. The macro cell array consists of 81T64MTJ cell array elements, each storing 64bits of data. The area size is reduced by more than 30%. By introducing a leakage-replication (LR) read scheme, a wide read margin on a test chip is accomplished and 50-ns access time is achieved with SPICE simulation. The 2T1MTJ macro and 81T64MTJ macro can be integrated into a single SoC.

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© 2009 The Institute of Electronics, Information and Communication Engineers
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