Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design

Jongwook JEON; Ickhyun SONG; Jong Duk LEE; Byung-Gook PARK; Hyungcheol SHIN

doi:10.1587/transele.E92.C.627

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design

Jongwook JEON, Ickhyun SONG, Jong Duk LEE, Byung-Gook PARK, Hyungcheol SHIN

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Keywords: CMOS, channel thermal noise, radio frequency integrated circuit (RFIC), low noise amplifier (LNA), noise figure

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2009 Volume E92.C Issue 5 Pages 627-634

DOI https://doi.org/10.1587/transele.E92.C.627

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Abstract

In this paper, a compact channel thermal noise model for short-channel MOSFETs is presented and applied to the radio frequency integrated circuit (RFIC) design. Based on the analysis of the relationship among different short-channel effects such as velocity saturation effect (VSE), channel-length modulation (CLM), and carrier heating effect (CHE), the compact model for the channel thermal noise was analytically derived as a simple form. In order to simulate MOSFET's noise characteristics in circuit simulators, an appropriate methodology is proposed. The used compact noise model is verified by comparing simulated results to the measured data at device and circuit level by using 65nm and 130nm CMOS technologies, respectively.

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