IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
Yoon KIMSeongjae CHOGil Sung LEEIl Han PARKJong Duk LEEHyungcheol SHINByung-Gook PARK
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2009 Volume E92.C Issue 5 Pages 653-658

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Abstract

We propose a 3-dimensional terraced NAND flash memory. It has a vertical channel so it is possible to make a long enough channel in 1F2 size. And it has 3-dimensional structure whose channel is connected vertically along with two stairs. So we can obtain high density as in the stacked array structure, without silicon stacking process. We can make NAND flash memory with 3F2 cell size. Using SILVACO ATLAS simulation, we study terraced NAND flash memory characteristics such as program, erase, and read. Also, its fabrication method is proposed.

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© 2009 The Institute of Electronics, Information and Communication Engineers
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