IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Analog Circuits and Related SoC Integration Technologies
Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE, Daisuke HORI, Norio SADACHIKA, Uwe FELDMANN, Mitiko MIURA-MATTAUSCH, Hans Jürgen MATTAUSCH, Tatsuya OHGURO, Takahiro IIZUKA, Masahiko TAGUCHI, Shunsuke MIYAMOTO
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Keywords: accumulation-mode, MOS varactor, carrier-transit delay, nonquasi-static effect, compact model, surface potential, circuit simulation, LC-VCO, frequency-tuning range, FTR, oscillation amplitude
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2009 Volume E92.C Issue 6 Pages 777-784

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Abstract

Frequency dependent properties of accumulation-mode MOS varactors, which are key elements in many RF circuits, are dominated by Non-Quasi-Static (NQS) effects in the carrier transport. The circuit performances containing MOS varactors can hardly be reproduced without considering the NQS effect in MOS-varactor models. For the LC-VCO circuit as an example it is verified that frequency-tuning range and oscillation amplitude can be overestimated by over 20% and more than a factor 2, respectively, without inclusion of the NQS effect.

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© 2009 The Institute of Electronics, Information and Communication Engineers
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