Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

François TEMPLIER; Julien BROCHET; Bernard AVENTURIER; David COOPER; Alexey ABRAMOV; Dmitri DAINEKA; Pere ROCA i CABARROCAS

doi:10.1587/transele.E93.C.1490

Special Section on Frontier of Thin-Film Transistor Technology

Polymorphous Silicon: A Promising Material for Thin-Film Transistors for Low-Cost and High-Performance Active-Matrix OLED Displays

François TEMPLIER, Julien BROCHET, Bernard AVENTURIER, David COOPER, Alexey ABRAMOV, Dmitri DAINEKA, Pere ROCA i CABARROCAS

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Keywords: thin-film transistors, polymorphous, silicon, OLED

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2010 Volume E93.C Issue 10 Pages 1490-1494

DOI https://doi.org/10.1587/transele.E93.C.1490

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Abstract

Hydrogenated polymorphous Silicon allows to fabricate TFTs with very interesting characteristics including better threshold voltage stability than a-Si TFTs, lower leakage current than µc-Si: H TFTs and excellent uniformity. Investigation of threshold voltage shift mechanisms of pm-Si: H TFTs has shown a specific semiconductor material degradation with different activation energies compared to a-Si: H TFTs. TEM analysis has evidenced for the first time a significant structural difference between pm-Si: H and a-Si: H materials, in the TFT device configuration. Pm-Si: H appears to be very suitable for low cost and high performance AM-OLED fabrication.

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