Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

Dong Seup LEE; Hong-Seon YANG; Kwon-Chil KANG; Joung-Eob LEE; Jung Han LEE; Seongjae CHO; Byung-Gook PARK

doi:10.1587/transele.E93.C.540

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

Dong Seup LEE, Hong-Seon YANG, Kwon-Chil KANG, Joung-Eob LEE, Jung Han LEE, Seongjae CHO, Byung-Gook PARK

Author information

Dong Seup LEE
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Hong-Seon YANG
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Kwon-Chil KANG
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Joung-Eob LEE
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Jung Han LEE
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Seongjae CHO
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University
Byung-Gook PARK
Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University

Keywords: tunnel field-effect transistor, subthreshold swing

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 5 Pages 540-545

DOI https://doi.org/10.1587/transele.E93.C.540

Details

Abstract

We propose a gate-all-around tunnel field effect transistor (GAA TFET) having a n-doped layer at the source junction and investigate its electrical characteristics with device simulation. By introducing the n-doped layer, band-to-band tunneling area is increased and tunneling barrier width is decreased. Also, electric field induced by gate bias is increased by the surrounding gate structure, which makes it possible to obtain a more abrupt band-bending. These effects bring about a significant improvement in on-current and subthreshold characteristics. GAA TFET with n-doped layer shows subthreshold swing at I_d =1nA/µm of 32.5mV/dec, average subthreshold swing of 20.6mV/dec. With comparison to other TFET structures, the merits of the proposed device are demonstrated and performance dependences on device parameters are characterized by extensive simulations.

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