SONOS-Type Flash Memory with HfO2 Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition

Jae Sub OH; Kwang Il CHOI; Young Su KIM; Min Ho KANG; Myeong Ho SONG; Sung Kyu LIM; Dong Eun YOO; Jeong Gyu PARK; Hi Deok LEE; Ga Won LEE

doi:10.1587/transele.E93.C.590

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

SONOS-Type Flash Memory with HfO₂ Thinner than 4nm as Trapping Layer Using Atomic Layer Deposition

Jae Sub OH, Kwang Il CHOI, Young Su KIM, Min Ho KANG, Myeong Ho SONG, Sung Kyu LIM, Dong Eun YOO, Jeong Gyu PARK, Hi Deok LEE, Ga Won LEE

Author information

Jae Sub OH
Dept. of Electronic Engineering, Chungnam National University
Kwang Il CHOI
Dept. of Electronic Engineering, Chungnam National University
Young Su KIM
National Nanofab Center
Min Ho KANG
National Nanofab Center
Myeong Ho SONG
Dept. of Electronic Engineering, Chungnam National University
Sung Kyu LIM
National Nanofab Center
Dong Eun YOO
Dept. of Electronic Engineering, Chungnam National University
Jeong Gyu PARK
Dept. of Electronic Engineering, Chungnam National University
Hi Deok LEE
Dept. of Electronic Engineering, Chungnam National University
Ga Won LEE
Dept. of Electronic Engineering, Chungnam National University

Keywords: SONOS, SOHOS, flash memory, high-k, HfO₂, nonvolatile memory, Atomic Layer Deposition

JOURNAL RESTRICTED ACCESS

2010 Volume E93.C Issue 5 Pages 590-595

DOI https://doi.org/10.1587/transele.E93.C.590

Details

Abstract

A HfO₂ as the charge-storage layer with the physical thickness thinner than 4nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4nm and the crystallization of the HfO₂ to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process.

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