IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Fumitaka IGAMasashi KAMIYANAGIShoji IKEDAKatsuya MIURAJun HAYAKAWAHaruhiro HASEGAWATakahiro HANYUHideo OHNOTetsuo ENDOH
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2010 Volume E93.C Issue 5 Pages 608-613

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Abstract

In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrated in CMOS circuit with 4-Metal/1-poly Gate 0.14µm CMOS process. We have measured the DC characteristics of the MTJ that is fabricated on via metal of 3rd layer metal line. This MTJ of 60×180nm2 achieves a large change in resistance of 3.52kΩ (anti-parallel) with TMR ratio of 151% at room temperature, which is large enough for sensing scheme of standard CMOS logic. Furthermore, the write current is 320µA that can be driven by a standard MOS transistor. As the results, it is shown that the DC performance of our fabricated MTJ integrated in CMOS circuits is very good for our novel spin logic (MTJ-based logic) device.

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© 2010 The Institute of Electronics, Information and Communication Engineers
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