We propose a character size optimization technique to reduce the number of EB shots of multi-column-cell (MCC) lithographic systems in which transistor patterns are projected with multiple column cells in parallel. Each and every column cell is capable of projecting patterns with character projection (CP) and variable shaped beam (VSB) methods. Seeking the optimal character size of characters contributes to minimizing the number of EB shots and reducing the fabrication cost for ICs. Experimental results show that the character size optimization achieved 70.6% less EB shots in the best case with an available electron beam (EB) size. Our technique also achieved 40.6% less EB shots in the best case than a conventional character sizing technique.