IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Analog Circuits and Related SoC Integration Technologies
A Near 1-V Operational, 0.18-µm CMOS Passive Sigma-Delta Modulator with 77dB of Dyanamic Range
Toru SAIYasuhiro SUGIMOTO
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2010 Volume E93.C Issue 6 Pages 747-754

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Abstract

A low-voltage operational capability near 1V along with low noise and distortion characteristics have been realized in a passive sigma-delta modulator. To achieve low-voltage operation, the dc voltage in signal paths in the switched-capacitor-filter section was set to be 0.2V so that sufficient gate-to-source voltages were obtained for metal-oxide-semiconductor (MOS) switches in signal paths without using a gate-voltage boosting technique. In addition, the input switch that connects the input signal from the outside to the inside of an integrated circuit chip was replaced by a passive resistor to eliminate a floating switch, and gain coefficients in the feedback and input paths were modified so that the bias voltage of the digital-to-analog converter could be set to VDD and 0V to easily activate MOS switches. As the signal swing becomes small under low-voltage operational circumstances, correlated double sampling was used to suppress the offset voltage and the 1/f noise that appeared at the input of a comparator. The modulator was fabricated using a standard CMOS 0.18-µm process, and the measured results show that the modulator realized 77dB of dynamic range for 40kHz of signal bandwidth with a 40MHz sampling rate while dissipating 2mW from a 1.1V supply voltage.

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© 2010 The Institute of Electronics, Information and Communication Engineers
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