IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Regular Section
Noise Analysis and Design of Low-Noise Bias-Offset MOS Transconductor
Shintaro NAKAMURAFujihiko MATSUMOTOPravit TONGPOONYasuaki NOGUCHI
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2011 Volume E94.C Issue 1 Pages 128-131

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Abstract

High integration and low power operation of integrated circuits make noise sensitivity high. Therefore, it is important to reduce noise of circuits. A bias-offset transconductor is known as a linear transconductor. It is expected that noise sensitivity of the transconductor becomes higher due to improvement of linearity and reduction of power dissipation. This paper proposes a design method to reduce noise considering high linearity, reduction of power dissipation and small circuit size.

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© 2011 The Institute of Electronics, Information and Communication Engineers
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