IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Circuits and Design Techniques for Advanced Large Scale Integration
An Injection-Controlled 10-Gb/s Burst-Mode CDR Circuit for a 1G/10G PON System
Hiroaki KATSURAIHideki KAMITSUNAHiroshi KOIZUMIJun TERADAYusuke OHTOMOTsugumichi SHIBATA
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2011 Volume E94.C Issue 4 Pages 582-588

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Abstract

As a future passive optical network (PON) system, the 10 Gigabit Ethernet PON (10G-EPON) has been standardized in IEEE 802.3av. As conventional Gigabit Ethernet PON (GE-PON) systems have already been widely deployed, 1G/10G co-existence technologies are strongly required for the next system. A gated voltage-controlled-oscillator (G-VCO)-based 10-Gb/s burst-mode clock and data recovery (CDR) circuit is presented for a 1G/10G co-existence PON system. It employs two new circuits to improve jitter transfer and provide tolerance to 1G/10G operation. An injection-controlled jitter-reduction circuit reduces output-clock jitter by 7dB from 200-MHz input data jitter while keeping a short lock time of 20ns. A frequency-variation compensation circuit reduces frequency mismatch among the three VCOs on the chip and offers large tolerance to consecutive identical digits. With the compensation, the proposed CDR circuit can employ multi VCOs, which provide tolerance to the 1G/10G co-existence situation. It achieves error-free (bit-error rate <10-12) operation for 10-G bursts following bursts of other rates, obviously including 1G bursts. It also provides tolerance to a 256-bit sequence without a transition in the data, which is more than enough tolerance for 65-bit CIDs in the 64B/66B code of 10 Gigabit Ethernet.

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© 2011 The Institute of Electronics, Information and Communication Engineers
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