IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Circuits and Design Techniques for Advanced Large Scale Integration
A 500 MS/s 600 µW 300 µm2 Single-Stage Gain-Improved and Kickback Noise Rejected Comparator in 0.35 µm 3.3 v CMOS Process
Sarang KAZEMINIAMorteza MOUSAZADEHKayrollah HADIDIAbdollah KHOEI
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2011 Volume E94.C Issue 4 Pages 635-640

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Abstract

This paper presents a high speed single-stage latched comparator which is scheduled in time for both amplification and latch operations. Small active area and simple switching strategy besides desired power consumption at high comparison rates qualifies the proposed comparator to be repeatedly employed in high speed flash A/D converters. A strategy of kickback noise elimination besides gain enhancement is also introduced. A low power holding read-out circuit is presented. Post-Layout simulation results confirm 500MS/s comparison rate with 5mv resolution for a 1.6v peak-to-peak input signal range and 600µw power consumption from a 3.3v power supply by using TSMC model of 0.35µm CMOS technology. Total active area of proposed comparator and read-out circuit is about 300µm2.

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© 2011 The Institute of Electronics, Information and Communication Engineers
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