An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory

Akira OTAKE; Keita YAMAGUCHI; Katsumasa KAMIYA; Yasuteru SHIGETA; Kenji SHIRAISHI

doi:10.1587/transele.E94.C.693

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory

Akira OTAKE, Keita YAMAGUCHI, Katsumasa KAMIYA, Yasuteru SHIGETA, Kenji SHIRAISHI

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Keywords: non-volatile memory, MONOS, SiN, first principles calculation, charge trap memory

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2011 Volume E94.C Issue 5 Pages 693-698

DOI https://doi.org/10.1587/transele.E94.C.693

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Abstract

Due to the aggressive scaling of non-volatile memories, “charge-trap memories” such as MONOS-type memories become one of the most important targets. One of the merits of such MONOS-type memories is that they can trap charges inside atomic-scale defect sites in SiN layers. At the same time, however, charge traps with atomistic scale tend to induce additional large structural changes. Hydrogen has attracted a great attention as an important heteroatom in MONOS-type memories. We theoretically investigate the basic characteristics of hydrogen-defects in SiN layer in MONOS-type memories on the basis of the first-principles calculations. We find that SiN structures with a hydrogen impurity tend to reveal reversible structural change during program/erase operation.

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