Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer

Young Su KIM; Min Ho KANG; Kang Suk JEONG; Jae Sub OH; Yu Mi KIM; Dong Eun YOO; Hi Deok LEE; Ga Won LEE

doi:10.1587/transele.E94.C.786

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

Dual-Gate ZnO Thin-Film Transistors with SiNx as Dielectric Layer

Young Su KIM, Min Ho KANG, Kang Suk JEONG, Jae Sub OH, Yu Mi KIM, Dong Eun YOO, Hi Deok LEE, Ga Won LEE

Author information

Keywords: ZnO, TFT, dual gate, sputter

JOURNAL RESTRICTED ACCESS

2011 Volume E94.C Issue 5 Pages 786-790

DOI https://doi.org/10.1587/transele.E94.C.786

Details

Abstract

We report on the fabrication of coplanar dual-gate ZnO thin-film transistors with 200-nm thickness SiN_x for both top and bottom dielectrics. The ZnO film was deposited by RF magnetron sputtering on SiO₂/Si substrates at 100°C. And the thickness of ZnO film is compared with 100-nm and 40-nm. This TFT has a channel width of 100-µm and channel length of 5-µm. The fabricated coplanar dual-gate ZnO TFTs of 40-nm-thickness exhibits a field effect mobility of about 0.29cm²/V s, a subthreshold swing 420mV/decade, an on-off ratio 2.7×10⁷, and a threshold voltage 0.9V, which are greatly improved characteristics, compared with conventional bottom-gate ZnO TFTs.

Corresponding author