Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se2 Films

Masahiro TAHASHI; Kenji IINUMA; Hideo GOTO; Kenji YOSHINO; Makoto TAKAHASHI; Toshiyuki IDO

doi:10.1587/transele.E95.C.1304

IEICE Transactions on Electronics

Online ISSN : 1745-1353
Print ISSN : 0916-8524

Regular Section

Effect of Dimethylselenium Supply Rate on Growth of Cu(In, Ga)Se₂ Films

Masahiro TAHASHI, Kenji IINUMA, Hideo GOTO, Kenji YOSHINO, Makoto TAKAHASHI, Toshiyuki IDO

Author information

Keywords: copper indium gallium diselenide, selenization, crystal growth, dimethylselenium

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 7 Pages 1304-1306

DOI https://doi.org/10.1587/transele.E95.C.1304

Details

Abstract

Polycrystalline Cu(In,Ga)Se₂ (CIGS) films were prepared by heat treatment of metallic precursors using dimethylselenium (Se(CH₃)₂), which is a less hazardous Se source than H₂Se gas. CIGS films were fabricated at various Se(CH₃)₂ supply rates. We investigated the effect of the Se(CH₃)₂ supply rate on the crystal phase and surface morphology of the films.

Content from these authors

Favorites & Alerts

Corresponding author

Register with J-STAGE for free!