IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Heterostructure Microelectronics with TWHM 2011
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10W
Noboru NEGORO, Masayuki KURODA, Tomohiro MURATA, Masaaki NISHIJIMA, Yoshiharu ANDA, Hiroyuki SAKAI, Tetsuzo UEDA, Tsuyoshi TANAKA
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Keywords: AlGaN/GaN MIS-HFET, K-band, power amplifier, Si substrate, high-temperature chemical vapor deposition SiN
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2012 Volume E95.C Issue 8 Pages 1327-1331

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Abstract

High output power AlGaN/GaN metal-insulator-semicon-ductor (MIS) hetero-junction field effect transistor (HFET) on Si substrate for millimeter-wave application has developed. High temperature chemical vapor deposition (HT-CVD) grown SiN as a gate insulator improves the breakdown characteristics which enables the operation at high drain voltage of 55V. The device exhibits high drain current of 1.1A/mm free from the current collapse and high RF gain of 10.4dB. The amplifier module developed AlGaN/GaN MIS-HFET with the gate width of 5.4mm exhibits an output power of 10.7W and a linear gain of 4dB at 26.5GHz. The resultant high output power is very promising for long-distance communication at millimeter-wave in the future which would enable high speed and high density data transmission.

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© 2012 The Institute of Electronics, Information and Communication Engineers
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