Compact Modeling of Expansion Effects in LDMOS

Takahiro IIZUKA; Takashi SAKUDA; Yasunori ORITSUKI; Akihiro TANAKA; Masataka MIYAKE; Hideyuki KIKUCHIHARA; Uwe FELDMANN; Hans Jürgen MATTAUSCH; Mitiko MIURA-MATTAUSCH

doi:10.1587/transele.E95.C.1817

Regular Section

Compact Modeling of Expansion Effects in LDMOS

Takahiro IIZUKA, Takashi SAKUDA, Yasunori ORITSUKI, Akihiro TANAKA, Masataka MIYAKE, Hideyuki KIKUCHIHARA, Uwe FELDMANN, Hans Jürgen MATTAUSCH, Mitiko MIURA-MATTAUSCH

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Keywords: high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 11 Pages 1817-1823

DOI https://doi.org/10.1587/transele.E95.C.1817

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Abstract

In LDMOS devices for high-voltage applications, there appears a notable fingerprint of current-voltage characteristics known as soft breakdown. Its mechanism is analyzed and modeled on LDMOS devices where a high resistive drift region exists. This analysis has revealed that the softness of breakdown, known as the expansion effect, withholding a run-away of current, is contributed by the flux of holes underneath the gate-overlap region originated by impact-ionization. The mechanism of the expansion effect is modeled and implemented into the compact model HiSIM_HV for circuit simulation. A good agreement between simulated characteristics and 2D-device simulation results is verified.

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