Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Atsushi TERANISHI; Safumi SUZUKI; Kaoru SHIZUNO; Masahiro ASADA; Hiroki SUGIYAMA; Haruki YOKOYAMA

doi:10.1587/transele.E95.C.401

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Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

Atsushi TERANISHI, Safumi SUZUKI, Kaoru SHIZUNO, Masahiro ASADA, Hiroki SUGIYAMA, Haruki YOKOYAMA

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Keywords: resonant tunneling diodes, terahertz oscillator, graded emitter, collector transit time

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2012 Volume E95.C Issue 3 Pages 401-407

DOI https://doi.org/10.1587/transele.E95.C.401

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Abstract

We estimated the transit time of GaInAs/AlAs double-barrier resonant tunneling diodes (RTDs) oscillating at 0.6-1THz. The RTDs have graded emitter structures and thin barriers, and are integrated with planar slot antennas for the oscillation. The transit time across the collector depletion region was estimated from measured results of the dependence of oscillation frequency on RTD mesa area. The estimated transit time was slightly reduced with the introduction of the graded emitter, probably due to reduction of the electron transition between Γ and L bands resulted from the low electric field in the collector depletion region.

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