High-Frequency Precise Characterization of Intrinsic FinFET Channel

Hideo SAKAI; Shinichi O'UCHI; Takashi MATSUKAWA; Kazuhiko ENDO; Yongxun LIU; Junichi TSUKADA; Yuki ISHIKAWA; Tadashi NAKAGAWA; Toshihiro SEKIGAWA; Hanpei KOIKE; Kunihiro SAKAMOTO; Meishoku MASAHARA; Hiroki ISHIKURO

doi:10.1587/transele.E95.C.752

Regular Section

High-Frequency Precise Characterization of Intrinsic FinFET Channel

Hideo SAKAI, Shinichi O'UCHI, Takashi MATSUKAWA, Kazuhiko ENDO, Yongxun LIU, Junichi TSUKADA, Yuki ISHIKAWA, Tadashi NAKAGAWA, Toshihiro SEKIGAWA, Hanpei KOIKE, Kunihiro SAKAMOTO, Meishoku MASAHARA, Hiroki ISHIKURO

Author information

Hideo SAKAI
Keio University
Shinichi O'UCHI
AIST
Takashi MATSUKAWA
AIST
Kazuhiko ENDO
AIST
Yongxun LIU
AIST
Junichi TSUKADA
AIST
Yuki ISHIKAWA
AIST
Tadashi NAKAGAWA
AIST
Toshihiro SEKIGAWA
AIST
Hanpei KOIKE
AIST
Kunihiro SAKAMOTO
AIST
Meishoku MASAHARA
AIST
Hiroki ISHIKURO
Keio University

Keywords: FinFET, SOI, De-embedding, RF, device modeling

JOURNAL RESTRICTED ACCESS

2012 Volume E95.C Issue 4 Pages 752-760

DOI https://doi.org/10.1587/transele.E95.C.752

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Abstract

This paper presents a precise characterization of high-frequency characteristics of intrinsic channel of FinFET. For the de-embedding of the parasitics attached to the source, drain and gate terminals, it proposes special calibration patterns which can place the reference surface just beside the intrinsic part of the FinFET. It compares the measured S parameter data up to 40GHz with the device simulation and shows good matching. The experimental data of the through pattern also confirms the accuracy of the de-embedded parasitics and extracted intrinsic part of FinFET.

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