Two voltage controlled current source (VCCS) models of double-channel p-type lateral extended drain MOS (DPLEDMOS) are firstly proposed to analyze the energy recovery circuit (ERC) efficiency of PDP data driver IC. In terms of the mathematical function between I_D and V_DS, the VCCS models are created. The presented models can be embedded in system software Saber to simulate the ERC waveform of data driver IC. A test board and a PDP system are used to verify the accuracy of the VCCS models. The experimental measurements agree with the simulation results very well and the maximum model error is 3.89%. Simulation results also show that the ERC efficiency of PDP data driver IC is influenced by three factors: the value of charge time T_ERC, the drain current I_D, and the capacitance of C_L. In an actual PDP system, T_ERC is restricted and C_L is changeless. The ERC efficiency of PDP data driver IC can be improved significantly by using DPLEDMOS which has higher I_D capacity. The proposed VCCS models of DPLEDMOS can be used to predict the ERC efficiency accurately.