L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications

Sang Wan KIM; Woo Young CHOI; Min-Chul SUN; Hyun Woo KIM; Jong-Ho LEE; Hyungcheol SHIN; Byung-Gook PARK

doi:10.1587/transele.E96.C.634

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications

Sang Wan KIM, Woo Young CHOI, Min-Chul SUN, Hyun Woo KIM, Jong-Ho LEE, Hyungcheol SHIN, Byung-Gook PARK

Author information

Sang Wan KIM
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University
Woo Young CHOI
Department of Electronic Engineering, Sogang University
Min-Chul SUN
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University
Process Integration Team (S.LSI), Semiconductor Business Group, Samsung Electronics Co.
Hyun Woo KIM
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University
Jong-Ho LEE
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University
Hyungcheol SHIN
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University
Byung-Gook PARK
Inter-University Semiconductor Research Center and Department of Electrical Engineering and Computer Science, Seoul National University

Keywords: L-shaped TFETs, subthreshold swing, steep slope, complementary logic function

JOURNAL RESTRICTED ACCESS

2013 Volume E96.C Issue 5 Pages 634-638

DOI https://doi.org/10.1587/transele.E96.C.634

Details

Abstract

In order to implement complementary logic function with L-shaped tunneling field-effect transistors (TFETs), current drivability and subthreshold swing (SS) need to be improved more. For this purpose, high-k material such as hafnium dioxide (HfO₂) has been used as gate dielectric rather than silicon dioxide (SiO₂). The effects of device parameters on performance have been investigated and the design of L-shaped TFETs has been optimized. Finally, the performance of L-shaped TFET inverters have been compared with that of conventional TFET ones.

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