IEICE Transactions on Electronics
Online ISSN : 1745-1353
Print ISSN : 0916-8524
Special Section on Fundamentals and Applications of Advanced Semiconductor Devices
Novel PNP BJT Structure to Improve Matching Characteristics for Analog and Mixed Signal Integrated Circuit Applications
Seon-Man HWANG, Yi-Jung JUNG, Hyuk-Min KWON, Jae-Hyung JANG, Ho-Young KWAK, Sung-Kyu KWON, Seung-Yong SUNG, Jong-Kwan SHIN, Yi-Sun CHUNG, Da-Soon LEE, Hi-Deok LEE
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Keywords: bipolar junction transistor (BJT), matching, analog application, matching coefficient
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2013 Volume E96.C Issue 5 Pages 663-668

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Abstract

In this paper, we suggest a novel pnp BJT structure to improve the matching characteristics of the bipolar junction transistor (BJT) which is fabricated using standard CMOS process. In the case of electrical characteristics, the collector current density Jc of the proposed structure (T2) is a little greater than the conventional structure (T1), which contributes to the greater current gain β of the proposed structure than the conventional structure. Although the matching characteristics of the collector current density of the proposed structure is almost similar to the conventional structure, that of the current gain of the proposed structure is better than the conventional structure about 14.81% due to the better matching characteristics of the base current density of the proposed structure about 59.34%. Therefore, the proposed BJT structure is desirable for high performance analog/digital mixed signal application.

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© 2013 The Institute of Electronics, Information and Communication Engineers
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