X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures

Akio OHTA; Katsunori MAKIHARA; Seiichi MIYAZAKI; Masao SAKURABA; Junichi MUROTA

doi:10.1587/transele.E96.C.680

Special Section on Fundamentals and Applications of Advanced Semiconductor Devices

X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures

Akio OHTA, Katsunori MAKIHARA, Seiichi MIYAZAKI, Masao SAKURABA, Junichi MUROTA

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Keywords: silicon germanium, heterostructure, chemical bonding features, valence band alignment, X-ray photoelectron spectroscopy

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2013 Volume E96.C Issue 5 Pages 680-685

DOI https://doi.org/10.1587/transele.E96.C.680

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Abstract

An SiO₂/Si-cap/Si_0.55Ge_0.45 heterostructure was fabricated on p-type Si(100) and strained silicon on insulator (SOI) substrates by low pressure chemical vapor deposition (LPCVD) and subsequent thermal oxidation in an O₂ + H₂ gas mixture. Chemical bonding features and valence band offsets in the heterostructures were evaluated by using high-resolution x-ray photoelectron spectroscopy (XPS) measurements and thinning the stack layers with a wet chemical solution.

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